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Controlling interlayer excitons in van der Waals heterostructures holdspromise for exploring Bose-Einstein condensates and developing noveloptoelectronic applications, such as excitonic integrated circuits. Despiteintensive studies, several key fundamental properties of interlayer excitons,such as their binding energies and interactions with charges, remain not wellunderstood. Here we report the formation of momentum-direct interlayer excitonsin a high-quality MoSe2/hBN/MoSe2 heterostructure under an electric field,characterized by bright photoluminescence (PL) emission with high quantum yieldand a narrow linewidth of less than 4 meV. These interlayer excitons showelectrically tunable emission energy spanning ~180 meV through the Starkeffect, and exhibit a sizable binding energy of ~81 meV in the intrinsicregime, along with trion binding energies of a few millielectronvolts.Remarkably, we demonstrate the long-range transport of interlayer excitons witha characteristic diffusion length exceeding ten micrometers, which can beattributed, in part, to their dipolar repulsive interactions. Spatially andpolarization-resolved spectroscopic studies reveal rich exciton physics in thesystem, such as valley polarization, local trapping, and the possible existenceof dark interlayer excitons. The formation and transport of tightly boundinterlayer excitons with narrow linewidth, coupled with the ability toelectrically manipulate their properties, open exciting new avenues forexploring quantum many-body physics, including excitonic condensate andsuperfluidity, and for developing novel optoelectronic devices, such as excitonand photon routers.

Electrical control and transport of tightly bound interlayer excitons in a MoSe2/hBN/MoSe2 heterostructure