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A holistic computational analysis is developed to calculate the quantumefficiency of InAs/GaSb superlattice-based photodetectors. Starting with theelectronic band characteristics computed by taking the InSb/GaAs at theinterface using the 8-band k.p approach, we demonstrate the impact of InAs andGaSb widths on the bandgap, carrier concentration, and the oscillator strengthfor type-II superlattice absorbers. Subsequently, the alteration of thesecharacteristics due to the extra AlSb layer in the M superlattice absorber isinvestigated. Extending our models for determining TE- and TM-polarized opticalabsorption, our calculations reveal that the TE-polarized absorption shows asubstantial influence near the conduction-heavy hole band transition energy,which eventually diminishes, owing to the dominant TM-contribution due to theconduction-light hole band transition. Extending our analysis to the darkcurrents, we focus mainly on Schokley-Read-Hall recombination and radiativerecombination at lower temperatures, and show that Schokley-Read-Hall dominatesat low-level injection. We show that short-wavelength and mid-wavelength Msuperlattice structures exhibit higher quantum efficiency than thecorresponding same bandgap type-II superlattice with the lower diffusion darkcurrent. Further, we analyze the density of states blocked by the barrier;crucial for XBp photodetector after absorber examination. Our work thus sets astage for a holistic and predictive theory aided analysis of the type-IIsuperlattice absorbers, from the atomistic interfacial details all the way tothe dark currents and absorption spectra.

Insights into optical absorption and dark currents of the 6.1{\AA} Type-II superlattice absorbers for MWIR and SWIR applications