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A holistic computational analysis is developed to advance models for quantumefficiency of InAs/GaSb superlattice-based photodetectors. Starting with theelectronic band characteristics computed by taking the InSb at the interfaceusing the 8-band k.p approach, we demonstrate the impact of InAs and GaSbwidths on the the bandgap, carrier concentration, and the oscillator strengthfor type-II superlattices. Subsequently, the alteration of thesecharacteristics due to the extra AlSb layer in the M superlattice isinvestigated. Extending our models for determining TE- and TM-polarized opticalabsorption, our calculations reveal that the TE-polarized absorption shows asubstantial influence near the conduction-heavy hole band transition energy,which eventually diminishes, owing to the dominant TM-contribution due to theconduction-light hole band transition. Extending our analysis to the darkcurrents, we notice that Schokley-Read-Hall recombination dominates at lowerdoping levels, while radiative recombination becomes dominant at higher dopinglevels. Auger transitions are also predicted using the conductionmini-bandwidth and the transition probabilities. We show that long-wavelength Msuperlattice structures exhibit longer diffusion lengths due to higherrecombination lifetimes, indicating that it can be heavily doped to improve thequantum efficiency. Mid-wavelength M superlattices show comparablecharacteristics, resulting in a 7% increase in quantum efficiency. Further, weanalyze the density of states blocked by the barrier; crucial for XBpphotodetector after absorber examination. Our work thus sets a stage for aholistic and predictive theory aided analysis of the type-II superlatticeabsorbers, from the atomistic interfacial details all the way to the darkcurrents and photoluminescence spectra.

Predictive computational modeling of optical absorption and dark  currents of the 6.1{\AA} Type-II superlattice absorbers for MWIR and LWIR  applications