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Doped semiconductor crystals of solid solution $Cd_{1-x}Mn_{x}Te:Fe^{2+}$were grown by the high-pressure Bridgman method covering the range of itsexistence as a zinc blende crystal structure. The concentration ofFe-impurities was approximately 0.001 wt.% in all studied samples. Thecorrelations between the composition of solid solution crystals of$Cd_{1-x}Mn_{x}Te:Fe^{2+}$, band gap, lattice period and the maxima positionsof the $Fe^{2+}$ active ion absorption and emission spectra were found. A newtheoretical model based on the principle of additivity for solid solutionsemiconductor materials has been used for explaining the long-wavelength''redshift'' of absorption and luminescence bands in the spectra of$Cd_{1-x}Mn_{x}Te:Fe^{2+}$ crystals with increasing solid solutionconcentration. The obtained results can be used to predict the lasing range for$Cd_{1-x}Mn_{x}Te:Fe^{2+}$ crystal media (in all possible $Mn$ concentrations),which is potentially the longest wavelength active material for mid-IR lasing.

Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals with linear sin-band redshift of absorption and emission spectra