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Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gainedaccelerated pace due to its superiorly large bandgap and commercialavailability of large-diameter native substrates. However, the high acceptoractivation energy obstructs the development of homojunction bipolar devicesemploying $\beta$-Ga$_2$O$_3$. The recently demonstrated semiconductor graftingtechnique provides an alternative and viable approach towardslattice-mismatched $\beta$-Ga$_2$O$_3$-based p-n heterojunctions with highquality interfaces. Understanding and quantitatively characterizing the bandalignment of the grafted heterojunctions is crucial for future bipolar devicedevelopment employing the grafting method. In this work, we present asystematic study of the band alignment in the grafted monocrystallineSi/$\beta$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectronspectroscopy (XPS). The core level peaks and valence band spectra of the Si,$\beta$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained andanalyzed. The band diagrams of the Si/$\beta$-Ga$_2$O$_3$ heterostructure wereconstructed using two individual methods, the core level peak method and thevalence band spectrum method, by utilizing the different portions of themeasured data. The reconstructed band alignments of the Si/$\beta$-Ga$_2$O$_3$heterostructure using the two different methods are identical within the errorrange. The band alignment is also consistent with the prediction from theelectron affinity values of Si and $\beta$-Ga$_2$O$_3$. The study suggests thatthe interface defect density in grafted Si/$\beta$-Ga$_2$O$_3$ heterostructureis at a sufficiently low level such that Fermi level pinning at the interfacehas been completely avoided and the universal electron affinity rule can besafely employed to construct the band diagrams of grafted monocrystallineSi/$\beta$-Ga$_2$O$_3$ heterostructures.

Band alignment of grafted monocrystalline Si (001)/$\beta$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy