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We report on MoSi-based superconducting nanowire single-photon detectors on agallium arsenide substrate. MoSi deposited on a passivated GaAs surface has thesame critical temperature as MoSi deposited on silicon. The criticaltemperature decreases slightly on depositing MoSi directly on the native oxideof GaAs. Hence, MoSi works well as a thin-film superconductor on GaAs. Wepropose that the amorphous structure of MoSi ensures compatibility with theGaAs matrix. Superconducting nanowire single-photon detectors (SNSPDs) arefabricated with MoSi on GaAs using a meander-wire design. The SNSPD metrics arevery similar to those of devices fabricated with the same procedure on asilicon substrate. We observe a plateau in the response-versus-bias curvesignalling a saturated internal quantum efficiency. The plateau remains even atan elevated temperature, 2.2 K, at a wavelength of 980 nm. We achieve a timingjitter of 50 ps and a recovery time of 29 ns. These results point to thepromise of integrating MoSi SNSPDs with GaAs photonic circuits.

MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration