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Electronic transport in monolayer MoS2 is significantly constrained byseveral extrinsic factors despite showing good prospects as a transistorchannel material. Our paper aims to unveil the underlying mechanisms of theelectrical and magneto-transport in monolayer MoS2. In order to quantitativelyinterpret the magneto-transport behavior of monolayer MoS2 on differentsubstrate materials, identify the underlying bottlenecks, and provideguidelines for subsequent improvements, we present a deep analysis of themagneto-transport properties in the diffusive limit. Our calculations areperformed on suspended monolayer MoS2 and MoS2 on different substrate materialstaking into account remote impurity and the intrinsic and extrinsic phononscattering mechanisms. We calculate the crucial transport parameters such asthe Hall mobility, the conductivity tensor elements, the Hall factor, and themagnetoresistance over a wide range of temperatures, carrier concentrations,and magnetic fields. The Hall factor being a key quantity for calculating thecarrier concentration and drift mobility, we show that for suspended monolayerMoS2 at room temperature, the Hall factor value is around 1.43 for magneticfields ranging from 0.001 to 1 Tesla, which deviates significantly from theusual value of unity. In contrast, the Hall factor for various substratesapproaches the ideal value of unity and remains stable in response to themagnetic field and temperature. We also show that the MoS2 over an Al2O3substrate is a good choice for the Hall effect detector. Moreover, themagnetoresistance increases with an increase in magnetic field strength forsmaller magnetic fields before reaching saturation at higher magnetic fields.The presented theoretical model quantitatively captures the scaling of mobilityand various magnetoresistance coefficients with temperature, carrier densitiesand magnetic fields.

Magneto-transport in the monolayer MoS2 material system for high-performance field-effect transistor applications