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Ion trap systems built upon microfabricated chips have emerged as a promisingplatform for quantum computing to achieve reproducible and scalable structures.However, photo-induced charging of materials in such chips can generateundesired stray electric fields that disrupt the quantum state of the ion,limiting high-fidelity quantum control essential for practical quantumcomputing. While crude understanding of the phenomena has been gainedheuristically over the past years, explanations for the microscopic mechanismof photo-generated charge carrier dynamics remains largely elusive. Here, wepresent a photo-induced charging model for semiconductors, whose verificationis enabled by a systematic interaction between trapped ions and photo-inducedstray fields from exposed silicon surfaces in our chip. We use motion-sensitivequbit transitions to directly characterize the stray field and analyze itseffect on the quantum dynamics of the trapped ion. In contrast to incoherenterrors arising from the thermal motion of the ion, coherent errors are inducedby the stray field, whose effect is significantly imprinted during the quantumcontrol of the ion. These errors are investigated in depth and methods tomitigate them are discussed. Finally, we extend the implications of our studyto other photo-induced charging mechanisms prevalent in ion traps.

Photo-induced charge carrier dynamics in a semiconductor-based ion trap investigated via motion-sensitive qubit transitions