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$\alpha$-Sn thin films can exhibit a variety of topologically non-trivialphases. Both studying the transitions between these phases and making use ofthese phases in eventual applications requires good control over the electronicand structural quality of $\alpha$-Sn thin films. $\alpha$-Sn growth on InSboften results in out-diffusion of indium, a p-type dopant. By growing$\alpha$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surfacereconstruction of InSb(001) rather than the In-rich c(8$\times$2), wedemonstrate a route to substantially decrease and minimize this indiumincorporation. The reduction in indium concentration allows for the study ofthe surface and bulk Dirac nodes in $\alpha$-Sn via angle-resolvedphotoelectron spectroscopy without the common approaches of bulk doping orsurface dosing, simplifying topological phase identification. The lack ofindium incorporation is verified in angle-resolved and -integrated ultravioletphotoelectron spectroscopy as well as in clear changes in the Hall response.

Growth and characterization of $\alpha$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)