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Sn1-xInxTe has been synthesized and studied recently as a candidatetopological superconductor. Its superconducting critical temperature increaseswith Indium concentration. However, the role of Indium in altering the normalstate band structure and generating superconductivity is not well-understood.Here, we explore this question in Sn1-xInxTe (0<x<0.3) thin films,characterized by magneto-transport, infrared transmission and photoemissionspectroscopy measurement. We show that Indium is forming an impurity band belowthe valence band edge which pins the Fermi energy and effectively generateselectron doping. An enhanced density-of-states due to this impurity band leadsto the enhancement of superconducting transition temperature measured inmultiple previous studies. The existence of the In impurity band and the roleof In as a resonant impurity should be more carefully considered whendiscussing the topological nature of Sn1-xInxTe.

Evidence of Indium impurity band in superconducting (Sn,In)Te thin films