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We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3hetero-p-n-junctions through the mechanical integration of their bulkmaterials. This resulting heterojunction, with a turn-on voltage of ~2.7 V atroom temperature, exhibits resilient electrical performance across atemperature spectrum up to 125{\deg}C, displaying minimal hysteresis-measuringas low as 0.2 V at room temperature and below 0.7 V at 125{\deg}C. Remarkably,the ideality factor achieves a record low value of 1.28, setting a newbenchmark for diamond/ \b{eta}-Ga2O3 heterojunctions. The rectification ratioreaches over 10^8 at different temperatures. This effortlessly fabricated andremarkably resilient diamond/Ga2O3 hetero-p-n-junction pioneers a novel pathwayfor the exploration and fabrication of heterojunctions for ultra-wide bandgapsemiconductors with substantial lattice mismatch and different thermalexpansion coefficients.

Robust Diamond/\b{eta}-Ga2O3 Hetero-p-n-junction Via Mechanically Integrating Their Building Blocks