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One of the boundary conditions of the classical electromagnetic theorydemands continuous electric potential across any boundary, which may not benaturally satisfied in atomically engineered heterostructures. Such polaritymismatch in oxide heterointerfaces is compensated through some(electronic/chemical/structural) reconstructions, leading to a myriad ofemergent phenomena. The question we are posing is whether conventionalsemiconductor band bending framework is sufficient to comprehend compensationmechanisms in oxide heterostructures since, unlike semiconductors, complexoxides host strong electron correlations whose effects are indispensable. Toaddress this, we investigate the interface between a prototypical insulatingdouble perovskite Nd$_2$NiMnO$_6$ and a wide-bandgap insulator SrTiO$_3$. Thispolar/non-polar interface offers a similar scenario as the famousLaAlO$_3$/SrTiO$_3$ system but with an exception - two transition metal siteswith two individual correlated energy scales. By combining several experimentaltechniques and density functional theory, we establish a site-selective chargecompensation process that occurs explicitly at the Mn site of the film, leavingthe Ni sites inert. This surprising selectivity, which cannot be accounted byexisting polar compensation mechanisms, is directly attributed to the TMcations' relative correlation energy scales. This discovery presents thatsite-specific charge compensation can be a designers tool for tailoringemergent phenomena in oxide heterostructures.

Electron correlation mediated site-selective charge compensation in polar/non-polar heterointerface