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In recent years, there has been a growing demand for room-temperature visiblesingle-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to itspotential in developing quantum computing, sensing, and communicationtechnologies. Despite various approaches explored for growing InGaN quantumdots on top of nanowires (NWs), achieving the emission of a single photon atroom temperature with sensible efficiency remains a challenge. This challengeis primarily attributed to difficulties in accomplishing the radial confinementlimit and the inherent giant built-in potential of the NWQD. In this report, wehave employed a novel Plasma Assisted Molecular Beam Epitaxy (PAMBE) growthapproach to reduce the diameter of the QD to the excitonic Bohr radius ofInGaN, thereby achieving strong lateral confinement. Additionally, we havesuccessfully suppressed the strong built-in potential by reducing the QDdiameter. Toward the end of the report, we have demonstrated single-photonemission (${\lambda}$ = 561 nm) at room-temperature from the NWQD and measuredthe second-order correlation function $g^{2}(0)$ as 0.11, which is notably lowcompared to other reported findings. Furthermore, the lifetime of carriers inthe QD is determined to be 775 ps, inferring a high operational speed of thedevices.

Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature