English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN HighElectron Mobility Transistor (HEMT) to the thicknesses on the order of or evensmaller than the Bohr radius confines electrons in the quantum well even at lowsheet carrier densities. In contrast to the conventional designs, this QuantumChannel (QC) confinement is controlled by epilayer design and the polarizationfield and not by the electron sheet density. As a result, the breakdown fieldat low sheet carrier densities increases by approximately 36% or even morebecause the quantization leads to an effective increase in the energy gap. Inaddition, better confinement increases the electron mobility at low sheetcarrier densities by approximately 50%. Another advantage is the possibility ofincreasing the aluminum molar fraction in the barrier layer because a very thinlayer prevents material relaxation and the development of dislocation arrays.This makes the QC especially suitable for high-voltage, high-frequency,high-temperature, and radiation-hard applications.

Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor