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Quantum information processing with photons in small-footprint and highlyintegrated silicon-based photonic chips requires incorporating non-classicallight sources. In this respect, self-assembled III-V semiconductor quantum dots(QDs) are an attractive solution, however, they must be combined with thesilicon platform. Here, by utilizing the large-area direct bonding technique,we demonstrate the hybridization of InP and SOI chips, which allows forcoupling single photons to the SOI chip interior, offering cost-effectivescalability in setting up a multi-source environment for quantum photonicchips. We fabricate devices consisting of self-assembled InAs QDs embedded inthe tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusingon devices generating light in the telecom C-band compatible with the low-lossoptical fiber networks, we demonstrate the light coupling between InP and SOIplatforms by observing photons outcoupled at the InP-made circular Bragggrating outcoupler fabricated at the end of an 80 $\mu$m-long Si WG, and at thecleaved edge of the Si WG. Finally, for a device with suppressed multi-photongeneration events exhibiting 80% single photon generation purity, we measurethe photon number outcoupled at the cleaved facet of the Si WG. We estimate thedirectional on-chip photon coupling between the source and the Si WG to 5.1%.

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding