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Antiferromagnetic (AFM) materials are a pathway to spintronic memory andcomputing devices with unprecedented speed, energy efficiency, and bit density.Realizing this potential requires AFM devices with simultaneous electricalwriting and reading of information, which are also compatible with establishedsilicon-based manufacturing. Recent experiments have shown tunnelingmagnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However,these TMR structures were not grown using a silicon-compatible depositionprocess, and controlling their AFM order required external magnetic fields.Here we show three-terminal AFM tunnel junctions based on the noncollinearantiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneouslyexhibit electrical switching using electric currents, and electrical readout bya large room-temperature TMR effect. First-principles calculations explain theTMR in terms of the momentum-resolved spin-dependent tunneling conduction intunnel junctions with noncollinear AFM electrodes.

All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance