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2D materials are considered a key element in the development ofnext-generation electronics (nanoelectronics) due to their extreme thickness inthe nanometer range and unique physical properties. The ultrafast dynamics ofphotoexcited carriers in such materials is strongly influenced by theirinterfaces, since the thickness of 2D materials is much smaller than thetypical depth of light penetration into them and the mean free path ofphotoexcited carriers. The resulting collisions of photoexcited carriers withinterfacial potential barriers of 2D materials in the presence of a stronglaser field significantly alter the overall dynamics of photoexcitation,allowing laser light to be directly absorbed by carriers in theconduction/valence band through the inverse bremsstrahlung mechanism. Thecorresponding ultrafast carrier dynamics can be monitored usingmultiphoton-pumped UV-Vis transient absorption spectroscopy. In this review, wediscuss the basic concepts and recent applications of this spectroscopy for avariety of 2D materials, including transition-metal dichalcogenide monolayers,topological insulators, and other 2D semiconductor structures.

Multiphoton-pumped UV-Vis transient absorption spectroscopy of 2D materials: basic concepts and recent applications