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We report efficient spin to charge conversion (SCC) in the topologicalinsulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$)by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and$Ni_{80}Fe_{20}$ is the ferromagnetic layer. The SCC, characterized by inverseEdelstein effect length ($\lambda_{IEE}$) in the TI material gets altered withan intervening Copper (Cu) layer and it depends on the interlayer thickness.The introduction of Cu layer at the interface of TI and ferromagnetic metal(FM) provides a new degree of freedom for tuning the SCC efficiency of thetopological surface states. The significant enhancement of the measuredspin-pumping voltage and the linewidth of ferromagnetic resonance (FMR)absorption spectra due to the insertion of Cu layer at the interface indicatesa reduction in spin memory loss at the interface that resulted from thepresence of exchange coupling between the surface states of TI and the localmoments of ferromagnetic metal. The temperature dependence (from 8K to 300K) ofthe evaluated $\lambda_{IEE}$ data for all the trilayer systems, TI/Cu/FM withdifferent Cu thickness confirms the effect of exchange coupling between the TIand FM layer on the spin to charge conversion efficiency of the topologicalsurface state.

Enhancement of spin to charge conversion efficiency at the topological  surface state by inserting normal metal spacer layer in the topological  insulator based heterostructure