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Two-dimensional systems are realized experimentally as thin layers on asubstrate. The substrate can have some imperfections (defects of thecrystalline structure, chemical impurities, etc.), which demonstrate strongerinteraction with the particles of the two-dimensional layer than the rest ofthe system. Such randomly distributed centers of strong interactions are called"pinning centers". The presence of random pinning can substantially change thebehavior of the system. It not only shifts the melting point of the system, butcan also change the melting scenario itself. In the present paper the influenceof Gaussian pinning on the melting scenario of a two-dimensional system of softdisks is studied by means of molecular dynamics simulation. We randomlyintroduce into the system of soft disks a set of "pinning centers" whichattract the particles via the Gauss potential. We observe that increasing thedepth of a Gaussian well leads to a change in the melting scenario of thesystem. The results demonstrate that simple kind of quenched disorder cansignificantly affect the melting scenario of two-dimensional systems, offeringthe possibility of its introduction in complex experiments and studying itsinfluence on the self-assembly and phase diagram of two-dimensional systems inrotating external fields.

The influence of Gaussian pinning on the melting scenario of a two-dimensional soft-disk system: First-Order versus Continuous Transition