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Spin qubits in germanium gate-defined quantum dots have made considerableprogress within the last few years, partially due to their strong spin-orbitcoupling and site-dependent $g$-tensors. While this characteristic of the$g$-factors removes the need for micromagnets and allows for the possibility ofall-electric qubit control, relying on these $g$-tensors necessitates the needto understand their sensitivity to the confinement potential that defines thequantum dots. Here, we demonstrate a $S-T\_$ qubit whose frequency is a strongfunction of the voltage applied to the barrier gate shared by the quantum dots.We find a $g$-factor that can be approximately increased by an order ofmagnitude adjusting the barrier gate voltage only by 12 mV. We attribute thestrong dependence to a variable strain profile in our device. This work notonly reinforces previous findings that site-dependent $g$-tensors in germaniumcan be utilized for qubit manipulation, but reveals the sensitivity andtunability these $g$-tensors have to the electrostatic confinement of thequantum dot.

Gate modulation of the hole singlet-triplet qubit frequency in germanium