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Recent discovery of ultrathick $\mathrm{MoSi_2N_4(MoN)_n}$ monolayers open upan exciting platform to engineer 2D material properties via intercalationarchitecture. Here we computationally investigate a series of ultrathickMA$_2$N$_4$(M'N) monolayers (M, M' = Mo, W; A = Si, Ge) under both homolayerand heterolayer intercalation architectures in which the same and differentspecies of transition metal nitride inner core layers are intercalated by outerpassivating nitride sublayers, respectively. The MA$_2$N$_4$(M'N) monolayersare thermally, dynamically and mechanically stable with excellent mechanicalstrength and metallic properties. Intriguingly, the metallic states aroundFermi level are localized within the inner core layers. Carrier conductionmediated by electronic states around the Fermi level is thus spatiallyinsulated from the external environment by the native outer nitride sublayers,suggesting the potential of MA$_2$N$_4$(M'N) in back-end-of-line (BEOL) metalinterconnect applications. Nitrogen vacancy defect at the outer sublayerscreates `punch through' states around the Fermi level that bridges the carrierconduction in the inner core layers and the outer environment, forming aelectrical contact akin to the `vias' structures of metal interconnects. Wefurther show that MoSi$_2$N$_4$(MoN) can serve as a quasi-Ohmic contact to 2DWSe$_2$. These findings reveal the promising potential of ultrathickMA$_2$N$_4$(MN) monolayers as metal electrodes and BEOL interconnectapplications.

Ultrathick MA$_2$N$_4$(M'N) Intercalated Monolayers with  Sublayer-Protected Fermi Surface Conduction States: Interconnect and Metal  Contact Applications