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Hexagonal boron-nitride (h-BN) provides an ideal substrate for supportinggraphene devices to achieve fascinating transport properties, such as Kleintunneling, electron optics and other novel quantum transport phenomena.However, depositing graphene on h-BN creates moir\'e superlattices, whoseelectronic properties can be significantly manipulated by controlling thelattice alignment between layers. In this work, the effects of these moir\'estructures on the transport properties of graphene are investigated usingatomistic simulations. At large misalignment angles (leading to small moir\'ecells), the transport properties (most remarkably, Klein tunneling) of pristinegraphene devices are conserved. On the other hand, in the nearly aligned cases,the moir\'e interaction induces stronger effects, significantly affectingelectron transport in graphene. In particular, Klein tunneling is significantlydegraded. In contrast, strong Fabry-P\'erot interference (accordingly, strongquantum confinement) effects and non-linear I-V characteristics are observed.P-N interface smoothness engineering is also considered, suggesting as apotential way to improve these transport features in graphene/h-BN devices.

Klein tunneling degradation and enhanced Fabry-P\'erot interference in graphene/h-BN moir\'e-superlattice devices