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Resistance switching in multilayer structures are typically based onmaterials possessing ferroic orders. Here we predict an extremely largeresistance switching based on the relative spin-orbit splitting in twistedtransition metal dichalcogenide (TMD) monolayers tunnel junctions. Because ofthe valence band spin splitting which depends on the valley index in theBrillouin zone, the perpendicular electronic transport through the junctiondepends on the relative reciprocal space overlap of the spin-dependent Fermisurfaces of both layers, which can be tuned by twisting one layer. Our quantumtransport calculations reveal a switching resistance of up to $10^6 \%$ whenthe relative alignment of TMDs goes from $0^{\circ}$ to $60^{\circ}$ and whenthe angle is kept fixed at $60^{\circ}$ and the Fermi level is varied. Bycreating vacancies, we evaluate how inter-valley scattering affects theefficiency and find that the resistance switching remains large ($10^4 \%$) fortypical values of vacancy concentration. Not only this resistance switchingshould be observed at room temperature due to the large spin splitting, but ourresults show how twist angle engineering and control of van der Waalsheterostructures could be used for next-generation memory and electronicapplications.

Giant Resistance Switch in Twisted Transition Metal Dichalcogenide Tunnel Junctions