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Achieving robust and electrically controlled valley polarization in monolayertransition metal dichalcogenides (ML-TMDs) is a frontier challenge forrealistic valleytronic applications. Theoretical investigations show thatintegration of 2D materials with ferroelectrics is a promising strategy;however, its experimental demonstration has remained elusive. Here, wefabricate ferroelectric field-effect transistors using a ML-WSe2 channel and aAlScN ferroelectric dielectric, and experimentally demonstrate efficient tuningas well as non-volatile control of valley polarization. We measured a largearray of transistors and obtained a maximum valley polarization of ~27% at 80 Kwith stable retention up to 5400 secs. The enhancement in the valleypolarization was ascribed to the efficient exciton-to-trion (X-T) conversionand its coupling with an out-of-plane electric field, viz. the quantum-confinedStark effect. This changes the valley depolarization pathway from strongexchange interactions to slow spin-flip intervalley scattering. Our researchdemonstrates a promising approach for achieving non-volatile control overvalley polarization and suggests new design principles for practicalvalleytronic devices.

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures