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Following a recently manifested guide of how to team up infrared transparencyand high electrical conductivity within semimetal materials [C. Cui $et$ $al.$Prog. Mater. Sci. 2023, 136, 101112], we evaluate an applicability of thecalcium digermanide (CaGe$_2$) thin film electrodes for the advanced Ge-basedoptical devices. Rigorous growth experiments were conducted to define theoptimal annealing treatment and thickness of the Ca-Ge mixture for producingstable CaGe$_2$ layers with high figure of merit (FOM) as transparentconducting material. Ab-initio electronic band structure calculations andoptical modeling confirmed CaGe$_2$ semimetal nature, which is responsible fora demonstrated high FOM. To test CaGe$_2$ electrodes under actual conditions, aplanar Ge photodetector (PD) with metal-semiconductor-metal structure wasfabricated, where CaGe$_2$/Ge interface acts as Schottky barrier. The resultingGe PD with semimetal electrodes outperformed commercially available Ge devicesin terms of both photoresponse magnitude and operated spectral range. Moreover,by using femtosecond-laser projection lithography, a mesh CaGe$_2$ electrodewith the relative broadband transmittance of 90\% and sheet resistance of 20$\Omega$/sq. was demonstrated, which further enhanced Ge PD photoresponse.Thus, obtained results suggest that CaGe$_2$ thin films have a great potentialin numerous applications promoting the era of advanced Ge optoelectronics.

A New Look at Calcium Digermanide CaGe$_2$: A High-Performing Semimetal Transparent Conducting Material for Ge Optoelectronics