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Compared with silicon (Si) power devices, Silicon carbide (SiC) devices havethe advantages of fast switching speed and low on-resistance. However, theeffects of non-ideal characteristics of SiC MOSFETs and stray parameters(especially parasitic inductance) on switching losses need to be furtherevaluated. In this paper, a transient loss model based on SiC MOSFET and SiCSchottky barrier diode (SBD) switching pairs is proposed. The transient processanalysis is simplified by time segmentation of the transient process of powerswitching devices. The electro-thermal simulation calculates the junctiontemperature and updates the temperature-related parameters with the proposedloss model and the thermal network model. A multi-rate data exchange strategyis proposed to solve the problem of disparity in timescales between circuitsimulation and thermal network simulation. The CREE CMF20120D SiC MOSFET deviceis used for the experimental verification. The experimental results verify theaccuracy of the model which provides guidance for the circuit design of SiCMOSFETs. All the parameters of the loss model can be extracted from thedatasheet, which is practical in power electronics design.

Accurate Time-segmented Loss Model for SiC MOSFETs in Electro-thermal Multi-Rate Simulation