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Implementing stimulated Raman scattering in a low-loss microresonator couldlead to Raman lasing. Here, we report the demonstration of an efficient Ramanlaser with $>50 \%$ power efficiency in an integrated silicon carbide platformfor the first time. By fine tuning the free spectral range (FSR) of43-$\mu$m-radius silicon carbide microresonators, the Stokes resonancecorresponding to the dominant Raman shift of $777\ \text{cm}^{-1}$ ($23.3$ THz)is aligned to the center of the Raman gain spectrum, resulting in a low powerthreshold of $2.5$ mW. The peak Raman gain coefficient is estimated to be($0.75 \pm 0.15) \ \text{cm}/\text{GW}$ in the 1550 nm band, with anapproximate full width at half maximum of ($120 \pm 30$) GHz. In addition, themicroresonator is designed to exhibit normal dispersion at the pump wavelengthnear 1550 nm while possessing anomalous dispersion at the first Stokes near1760 nm. At high enough input powers, a Kerr microcomb is generated by theStokes signal acting as the secondary pump, which then mixes with the pumplaser through four-wave mixing to attain a wider spectral coverage.Furthermore, cascaded Raman lasing and occurrence of multiple Raman shifts,including $204\ \text{cm}^{-1}$ ($6.1$ THz) and $266\ \text{cm}^{-1}$ ($8.0$THz) transitions, are also observed. Finally, we show that the Stokes Ramancould also help broaden the spectrum in a Kerr microcomb which has anomalousdispersion at the pump wavelength. Our example of a 100-GHz-FSR microcomb has awavelength span from 1200 nm to 1900 nm with 300 mW on-chip power.

Efficient Raman lasing and Raman-Kerr interaction in an integrated silicon carbide platform