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We report on the epitaxial growth, theoretical modeling, and structural aswell as optical investigation of multi-layer, site-controlled quantum dotsfabricated using the buried stressor method. This advanced growth techniqueutilizes the strain from a partially oxidized AlAs layer to inducesite-selective nucleation of InGaAs quantum dots. By implementingstrain-induced spectral nano-engineering, we achieve separation in emissionenergy by about 150 meV of positioned and non-positioned quantum dots and alocal increase of the emitter density in a single layer. Furthermore, weachieve a threefold increase of the optical intensity and reduce theinhomogeneous broadening of the ensemble emission by 20% via stacking threelayers of site-controlled emitters, which is particularly valuable for usingthe SCQDs in microlaser applications. Moreover, we obtain direct control overemission properties by adjusting the growth and fabrication parameters. Ouroptimization of site-controlled growth of quantum dots enables the developmentof photonic devices with enhanced light-matter interaction and microlasers withincreased confinement factor and spontaneous emission coupling efficiency.

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method