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Artificial lattices constructed from individual dopant atoms within asemiconductor crystal hold promise to provide novel materials with tailoredelectronic, magnetic, and optical properties. These custom engineered latticesare anticipated to enable new, fundamental discoveries in condensed matterphysics and lead to the creation of new semiconductor technologies includinganalog quantum simulators and universal solid-state quantum computers. In thiswork, we report precise and repeatable, substitutional incorporation of singlearsenic atoms into a silicon lattice. We employ a combination of scanningtunnelling microscopy hydrogen resist lithography and a detailed statisticalexploration of the chemistry of arsine on the hydrogen terminated silicon (001)surface, to show that single arsenic dopants can be deterministically placedwithin four silicon lattice sites and incorporated with 97$\pm$2% yield. Thesefindings bring us closer to the ultimate frontier in semiconductor technology:the deterministic assembly of atomically precise dopant and qubit arrays atarbitrarily large scales.

Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication