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Silicon carbide (SiC) emerges as a promising ceramic material forhigh-temperature structural applications, especially within the aerospacesector. The utilization of SiC-based ceramic matrix composites (CMCs) insteadof superalloys in components like engine shrouds, combustors, and nozzlesoffers notable advantages, including a 25% improvement in fuel efficiency, over10% enhanced thrust, and the capability to withstand up to 500$^{\circ}$Chigher operating temperatures. Employing a CALPHAD-reinforced multi-phase-fieldmodel, our study delves into the evolution of the SiC layer under isothermalsolidification conditions. By modeling the growth of SiC between liquid Si andsolid C at 1450$^{\circ}$C, we compared results with experimentalmicrostructures and quantitatively examined the evolution of SiC thickness overtime. Efficient sampling across the entire model space mitigated uncertainty inhigh-temperature kinetic parameters, allowing us to predict a range of growthrates and morphologies for the SiC layer. The model accounts for parameteruncertainty stemming from limited experimental knowledge and successfullypredicts relevant morphologies for the system. Experimental results validatedthe kinetic parameters of the simulations, offering valuable insights andpotential constraints on the reaction kinetics. We further explored thesignificance of multi-phase-field model parameters on two key outputs, andfound that the diffusion coefficient of liquid Si emerges as the most crucialparameter significantly impacting the SiC average layer thickness and graincount over time. This study provides valuable insights into the microstructureevolution of the Si-C binary system, offering pertinent information for theengineering of CMCs in industrial applications.

Phase-Field Model of Silicon Carbide Growth During Isothermal Condition