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The standard theoretical framework for fractional quantum anomalous Halleffect (FQAH) assumes an isolated flat Chern band in the single particle level.In this paper we challenges this paradigm for the FQAH recently observed in thepentalayer rhombohedral stacked graphene aligned with hexagon boron nitride(hBN). We show that the external moir\'e superlattice potential is simply aperturbation in a model with continuous translation symmetry. Through HartreeFock calculation, we find that interaction opens a sizable remote band gap,resulting an isolated narrow $C=1$ Chern band at filling $\nu=1$. From exactdiagonalization (ED) we identify FQAH phases at various fillings. But theyexist also in the calculations without any external moir\'e potential. Wesuggest that the QAH insulator at $\nu=1$ should be viewed as an interactiondriven QAH-Wigner crystal, which is then pinned by a small moir\'e potential.In the second part we propose a new setup with Coulomb generated moir\'esuperlattice. For example, we separate $n$-layer graphene and twisted bilayergraphene (TBG) with a thin hBN and imprint the superlattice of the TBG to the$n$-layer graphene. Now the superlattice potential is controlled by thethickness $d$ of the hBN and the superlattice period is controlled by the twistangle of the TBG. Overall in both setups the $C=1$ QAH-Wigner crystal is robustwith a crystal period around $10\mathrm{nm}$ in 4-layer, 5-layer, 6-layer and7-layer graphene systems. Our work suggests a new direction to explore theinterplay of topology and FQAH with spontaneous Wigner crystal formation in thevanishing moir\'e potential limit.

Fractional quantum anomalous Hall effects in rhombohedral multilayer graphene in the moir\'eless limit and in Coulomb imprinted superlattice