English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

For 4H silicon carbide (4H-SiC), the values for the electron-hole paircreation energy $\epsilon_{\text{i}}$ published in literature varysignificantly. This work presents an experimental determination of$\epsilon_{\text{i}}$ for a $50$ $\mu$m 4H-SiC p-n diode designed for particledetection in high energy physics. The detector response was measured for$\alpha$ particles between $4.2$ MeV and $5.6$ MeV for 4H-SiC and a siliconreference device. Different $\alpha$ energies were obtained by using multiplenuclides and varying the effective air gap between the $\alpha$ source and thedetector. The energy deposited in the detectors was determined using a MonteCarlo simulation taking into account the device cross-section. A linear fit ofthe detector response to the deposited energy yields $\epsilon_{\text{i}} =(7.83 \pm 0.02)\;\text{eV}$, which agrees well with the most recent literature.

Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode