English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report first-principles calculations that propose a nonvolatile spin fieldeffect transistor (spin- FET) based on a van der Waals multiferroicheterostructure, i.e., VSi2N4/Sc2CO2. We find that the inversion offerroelectric polarization of monolayer Sc2CO2 can efficiently modulate theelectronic states of monolayer VSi2N4. A half-metal to half-semiconductor phasetranslation of VSi2N4 can be efficiently realized, which leads to distinctelectronic transport properties. We additionally construct a spin-FET devicebased on the multiferroic heterostructure. We find that the VSi2 N4 /Sc2 CO2based Spin-FET has remarkable all-electric-controlled performance. A largeon-off current ratio of about 650% induced by the inversion of Sc2CO2ferroelectric polarization can be obtained under a small bias voltage (0.02 V).We also find an interesting spatially-separated spin-polarized transportphenomenon, with the pure spin-up (spin-down) electrons transporting merely inVSi2N4 (Sc2CO2). Our study provides a promising approach for constructinglow-energy-dissipation and nonvolatile FET devices.

Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure