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Experiments have shown that the light-emission efficiency of indium galliumnitride (InGaN) light-emitting diodes improves with increasing indiumconcentration. It is widely thought that compositional fluctuations due toindium incorporation suppress diffusion of carriers to non-radiative centers,thus leading to defect-insensitive emission. However, recent experiments havechallenged this hypothesis by revealing unexpectedly long diffusion lengths atroom temperature. Here, we demonstrate an alternative mechanism involving thecorrelated reduction in radiative and non-radiative recombination rates thatexplains the increase in light-emission efficiency of InGaN with increasingindium concentration, without invoking the suppression of carrier diffusion.Our analysis challenges the notion that carrier localization gives rise todefect tolerance in InGaN.

Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates