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We find the recently developed strongly constrained and appropriately normed(SCAN) functional, now widely used in calculations of many materials, is notable to reliably describe the properties of deep defects and small polarons ina set of wide-bandgap semiconductors and insulators (ZnO, ZnSe, GaN,Ga$_2$O$_3$, and NaF). By comparing first-principles calculations using theSCAN functional against established experimental information andfirst-principles calculations using a hybrid functional, we find that the SCANfunctional systematically underestimates the magnitude of the structuraldistortions at deep defects and tends to delocalize the charge density of thesedefect states.

Assessing the SCAN functional for deep defects and small polarons in wide-bandgap semiconductors and insulators