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Transition metal dichalcogenide (TMDC) heterostructures have uniqueproperties that depend on the twisting angle and stacking order of two or moremonolayers. However, their practical applications are limited by the lowphotoluminescence yield of interlayer excitons. This limits the use of layered2D materials as a versatile platform for developing innovative optoelectronicand spintronic devices. In this study, we report on the emission enhancement ofinterlayer excitons in multilayered-stacked monolayers through the fabricationof heterotrilayers consisting of WSe$_2$/WSe$_2$/MoSe$_2$ with differing twistangles. Our results show that an additional WSe$_2$ monolayer introduces newabsorption pathways, leading to an improvement in the emission of interlayerexcitons by more than an order of magnitude. The emission boost is affected bythe twist angle, and we observe a tenfold increase in the heterotrilayer areawhen there is a 44$^\circ$ angle between the WSe$_2$ and MoSe$_2$ materials, asopposed to their heterobilayer counterparts. Furthermore, using densityfunctional theory, we identify the emergence of new carrier transfer pathwaysin the three-layer sample which extends the current understanding of 2Dsemiconducting heterostructures. In addition, our research provides a viableway to significantly enhance the emission of interlayer excitons. The emissionenhancement of interlayer excitons is significant not only for studying thefundamental properties of interlayer excitons, but also for enablingoptoelectronic applications that utilize engineered 2D quantum materials withhigh luminescence yield.

Amplification of interlayer exciton emission in twisted WSe$_2$/WSe$_2$/MoSe$_2$ heterotrilayers