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We propose a theoretical model for an all-Heusler magnetic tunnel junctionthat uses two Heusler compounds: Fe$_2$CrSi and Fe$_2$TiSi, both of which canbe experimentally synthesized. Fe$_2$CrSi is a half-metallic ferromagnet,making it a promising material for efficient spin injection in magnetic randomaccess memories and other spin-dependent devices. While, Fe$_2$TiSi is anonmagnetic semiconductor that has the same lattice structure and comparablelattice constant with Fe$_2$CrSi, as it can be obtained by substituting the$Y$-site atoms in Fe$_2$CrSi. By using Fe$_2$TiSi as a tunneling barriersandwiched by two pieces of semi-infinite Fe$_2$CrSi to construct anall-Heusler magnetic tunnel junction, the interface disorder is naturallyreduced. Our calculations demonstrate that this magnetic tunnel junction canexhibit a giant tunneling magnetoresistance of up to 10$^{9}$\% and remainsrobust under finite bias voltage. These characteristics suggest thatFe$_2$CrSi/Fe$_2$TiSi/Fe$_2$CrSi MTJ will be an ideal candidate for futurespintronic applications. More importantly, such a device model can keep such agiant tunneling magnetoresistance at and beyond room temperature due to thehigh Curie temperature of Fe$_2$CrSi.

Giant tunneling magnetoresistance in Fe$_2$CrSi/Fe$_2$TiSi/Fe$_2$CrSi magnetic tunnel junction