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Silicon photonics has many attractive features but faces a major issue:inefficient and slow photodetection in the telecom range. Newmetal-semiconductor Schottky photodetectors based on intraband absorptionaddress this problem, but their efficiency remains low. We suggest that bycreating a junction between silicon and a transparent oxide with appropriatedoping, which results in a real permittivity close to zero (known as theepsilon near zero or ENZ regime), detection efficiency could increase by morethan tenfold. Using Aluminum Zinc Oxide (AZO) as an example, we design anoptimized AZO/Si slot photonic waveguide detector that could potentially reachan efficiency of several tens of percent, in contrast to a few percent for ametal/Si Schottky detector. This increase is primarily due to the lower densityof states in AZO compared to metal, along with superior coupling efficiency andstrong absorption within a 10 nm slot.

Schottky photodetectors with transparent conductive oxides for photonic integrated circuits