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A practical quantitative model is presented to account for the I-Vcharacteristics of pin diodes based on epitaxial Ge-like materials. The modelcan be used to quantify how the different material properties and recombinationmechanisms affect the diode performance. The importance of dislocations,non-passivated defects, and residual intrinsic layer doping in determining thequalitative shape of the I-V curves is discussed in detail. Examples are showncovering literature diodes as well as diodes fabricated with the purpose ofvalidating the theoretical effort.

A practical theoretical model for Ge-like epitaxial diodes: I. The I-V characteristics