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The emergence of the fascinating non-linear Hall effect intrinsically dependson the non-zero value of the Berry curvature dipole. In this work, we predictthat suitable strain engineering in layered van der Waals material phosphorenecan give rise to a significantly large Berry curvature dipole. Using symmetrydesign principles, and a combination of feasible strain and staggered on-sitepotentials, we show how a substantial Berry curvature dipole may be engineeredat the Fermi level. We discover that monolayer phosphorene exhibits the mostintense Berry curvature dipole peak near 11.8% strain, which is also a criticalpoint for the topological phase transition in pristine phosphorene.Furthermore, we have shown that the necessary strain value to achievesubstantial Berry curvature dipole can be reduced by increasing the number oflayers. We have revealed that strain in these van der Waals systems not onlyalters the magnitude of Berry curvature dipole to a significant value butallows control over its sign. We are hopeful that our predictions will pave wayto realize the non-linear Hall effect in such elemental van der Waals systems.

Berry Curvature Dipole and its Strain Engineering in Layered Phosphorene