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Transition metal (TM) defects in silicon carbide (SiC) are a promisingplatform for applications in quantum technology as some of these defects, e.g.vanadium (V), allow for optical emission in one of the telecom bands. For otherdefects it was shown that straining the crystal can lead to beneficial effectsregarding the emission properties. Motivated by this, we theoretically studythe main effects of strain on the electronic level structure and opticalelectric-dipole transitions of the V defect in SiC. In particular we show howstrain can be used to engineer the g-tensor, electronic selection rules, andthe hyperfine interaction. Based on these insights we discuss optical Lambdasystems and a path forward to initializing the quantum state of strained TMdefects in SiC.

Strain Engineering for Transition Metal Defects in SiC