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Quantum dots are promising candidates for telecom single photon sources dueto their tunable emission across the different low-loss telecommunicationsbands, making them compatible with existing fiber networks. Their suitabilityfor integration into photonic structures allows for enhanced brightness throughthe Purcell effect, supporting efficient quantum communication technologies.Our work focuses on InAs/InP QDs created via droplet epitaxy MOVPE to operatewithin the telecoms C-band. We observe a short radiative lifetime of 340 ps,arising from a Purcell factor of 5, owing to interaction of the QD within alow-mode-volume photonic crystal cavity. Through in-situ control of the sampletemperature, we show both temperature tuning of the QD's emission wavelengthand a preserved single photon emission purity at temperatures up to 25K. Thesefindings suggest the viability of QD-based, cryogen-free, C-band single photonsources, supporting applicability in quantum communication technologies.

Purcell-Enhanced Single Photons at Telecom Wavelengths from a Quantum Dot in a Photonic Crystal Cavity