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Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantumtechnologies, including quantum metrology and sensing. A promising strategy forthe achievement of high sensitivity to external fields relies on theexploitation of large ensembles of NV centers, whose fabrication by ionimplantation is upper limited by the amount of radiation damage introduced inthe diamond lattice. In this works we demonstrate an approach to increase thedensity of NV centers upon the high-fluence implantation of MeV N2+ ions on ahot target substrate (>550 {\deg}C). Our results show that, with respect toroom-temperature implantation, the high-temperature process increases thevacancy density threshold required for the irreversible conversion of diamondto a graphitic phase, thus enabling to achieve higher density ensembles.Furthermore, the formation efficiency of color centers was investigated ondiamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ionsrevealing that the formation efficiency of both NV centers andmagnesium-vacancy (MgV) centers increases with the implantation temperature.

Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate