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Inducing and controlling electrostatic barriers in two-dimensional (2D)quantum materials has shown extraordinary promise to enable control of chargecarriers, and is key for the realization of nanoscale electronic andoptoelectronic devices1-10. Because of their atomically thin nature, the 2Dmaterials have a congenital advantage to construct the thinnest possible p-njunctions1,3,7,9,10. To realize the ultimate functional unit for futurenanoscale devices, creating atomically wide electrostatic barriers embedded in2D materials is desired and remains an extremely challenge. Here we report thecreation and manipulation of atomically wide electrostatic barriers embedded ingraphene WSe2 heterostructures. By using a STM tip, we demonstrate the abilityto generate a one-dimensional (1D) atomically wide boundary between 1T-WSe2domains and continuously tune positions of the boundary because offerroelasticity of the 1T-WSe2. Our experiment indicates that the 1D boundaryintroduces atomically wide electrostatic barriers in graphene above it. Thenthe 1D electrostatic barrier changes a single graphene WSe2 heterostructurequantum dot from a relativistic artificial atom to a relativistic artificialmolecule.

Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene WSe2 Heterostructure