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Two-dimensional (2D) materials are particularly attractive to build thechannel of next-generation field-effect transistors (FETs) with gate lengthsbelow 10-15 nm. Because the 2D technology has not yet reached the same level ofmaturity as its Silicon counterpart, device simulation can be of great help topredict the ultimate performance of 2D FETs and provide experimentalists withreliable design guidelines. In this paper, an ab initio modelling approachdedicated to well-known and exotic 2D materials is presented and applied to thesimulation of various components, from thermionic to tunnelling transistorsbased on mono- and multi-layer channels. Moreover, the physics of metal - 2Dsemiconductor contacts is revealed and the importance of different scatteringsources on the mobility of selected 2D materials is discussed. It is expectedthat modeling frameworks similar to the one described here will not onlyaccompany future developments of 2D devices, but will also enable them.

Field-Effect Transistors based on 2-D Materials: a Modeling Perspective