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This paper investigates wake-up and imprint in ferroelectric AlScN films. Thestudy employs a series of I-V and P-E measurements with varying electric fieldamplitudes and voltage cycles as well as structural investigation via ScanningElectron Microscopy to understand the origin and underlying principle ofwake-up and imprint as well as their relation. It is shown that the materialcan be considered wake-up free, however inherent imprint and imprint shift incombination with minor loops result in a wake-up like effect. We introduce aproposition to explain the influence of initial switching cycles on domains,their stabilization and corresponding changes in imprint. Unipolar fields andtemperature investigations are used to explore the reversibility of imprint andways to program it, while partial switching is applied to investigate domainpropagation and support the aforementioned approach. It is concluded, thatafter an energetically more demanding domain nucleation, domain wall motion canswitch the majority of polarization in Al1-xScxN. As a consequence, thepresence of initial domains reduces the coercive field in respect to unipolarfilms.

The Interplay Between Imprint, Wake-Up Like Effects and Domains in Ferroelectric AlScN