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Silicon Emitting Centers (SEC) constitute promising candidates for quantumtelecommunication technologies. Their operation depends on the fabrication oflight emitting defect centers such as the triinterstitial Si complex, theW-Center. In this paper the formation of Si tri-interstitial clusters after Gaion beam bombardment on pure silicon substrates and a subsequent annealingstage is investigated using molecular dynamics (MD) simulations. This studyaims to understand the dynamic formation process of W centers after Gaimplantation and annealing in order to assist the focused ion beam andannealing experimental systems. A new tri-interstitial cluster identificationmethod is proposed which considers the configuration of the clusters in the Silattice in order to identify the defects which will act as candidates for the Wcenter. This method successfully identifies W center defect candidates in anideal system. The number of tri-interstitial clusters increases and spreaddeeper into the Si for higher energies and their probability of generationincreases until a limiting Ga dose. Furthermore, annealing can eliminate a lotof the unwanted defects maintaining at the same time the number of thetri-interstitial clusters, leading to isolated clusters with less distortedlocal environment.

Molecular dynamics simulation of W Silicon Emitting Centers formation by Ga ion implantation