English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

III-V semiconductor-based photoelectrochemical (PEC) devices show the highestsolar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is arelevant top photoabsorber layer or a charge-selective contact in PEC forintegrated and direct solar fuel production, due to its tunable latticeconstant, electronic band structure, and favorable optical properties. Toenhance the stability of its surface against chemical corrosion which leads todecomposition, we deposit a GaN protection and passivation layer. The n-dopedGaInP(100) epitaxial layers were grown by metalorganic chemical vapordeposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN filmswere grown on top of the oxidized GaInP surfaces by atomic layer deposition. Westudied the band alignment of these multi-junction heterostructures by X-rayand ultraviolet photoelectron spectroscopy. Due to the limited emission depthof photoelectrons, we determined the band alignment by a series of separatemeasurements in which we either modified the GaInP(100) surface termination orthe film thickness of the grown GaN on GaInP(100) buffer layers. Onn-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2)reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermilevel pinning due to the present surface states. Upon oxidation, the surfacestates are partially passivated resulting in a reduction of BB to 0.12 eV and avalence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between theGaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of1.8 eV. The corresponding conduction band offset of -0.2 eV is found to berather small. Therefore, we evaluate the application of the GaN passivationlayer as a promising technological step not only to reduce surface states butalso to increase the stability of the surfaces of photoelectrochemical devices.

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface