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Monolayer transition metal dichalcogenides (TMDCs) constitute the core groupof materials in the emerging semiconductor technology of valleytronics. Whilethe coupled spin-valley physics of pristine TMDC materials and theirheterstructures has been extensively investigated, less attention was given toTMDC alloys, which could be useful in optoelectronic applications due to thetunability of their band gaps. We report here our experimental investigationsof the spin-valley physics of the monolayer and bilayer TMDC alloy,MoS$_{2x}$Se$_{2(1-x)}$, in terms of valley polarization and the generation aswell as electrical control of a photocurrent utilising the circularphotogalvanic effect. Piezoelectric force microscopy provides evidence for aninternal electric field perpendicular to the alloy layer, thus breaking theout-of-plane mirror symmetry. The experimental observation is supported byfirst principles calculations based on the density functional theory. Acomparison of the photocurrent device, based on the alloy material, is madewith similar devices involving other TMDC materials.

Valley polarization and photocurrent generation in transition metal dichalcogenide alloy MoS$_{2x}$Se$_{2(1-x)}$