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Two-dimensional semiconductors, known as Transition Metal Dichalcogenides(TMDCs), are of great interest among many materials due to their unique 2Dcharacteristics, including exceptional electronic and optical properties. Thesecompounds belong to the family of lamellar materials having a general formulaof type $MX_2$, where M represents a transition metal belonging to one ofgroups IV, V, or VI of Mendeleev's periodic table, and X is a chalcogenide.These materials exhibit fundamental properties that are qualitatively differentfrom their three-dimensional (3D) counterparts, often relating to theirelectronic and phononic band structure. The in-depth study of these materialshas revealed remarkable phenomena, such as two-dimensional quantum phasetransitions and optoelectronic phenomena related to electronic "valleys", whichexploit the wavevector selectivity of the emission and the absorption ofphotons. Unlike graphene, materials such as MoS$_2$, MoSe$_2$, WS$_2$, andWSe$_2$ are semiconductors that have a bandgap varying from 1.2 to 1.9 electronvolts (eV), depending on the number of layers. This characteristic makes themsuitable for use as active elements in optoelectronic devices. Additionally,their two-dimensional nature and mechanical strength enable the realization ofquantum phase transitions and electronic components on flexible substrates. Itis also possible to create quantum wells based on MoS$_2$, with materials suchas MoSe$_2$, WS$_2$, and WSe$_2$, depending on the band shift between thecomponents of the quantum well.  This work aims to propose a theoretical and numerical model for thesematerials, which will make it possible to determine the electronic bandstructure as well as the optical gain in an active zone composed oftwo-dimensional semiconductors. This research is of great importance forevaluating the performance of active zones in laser devices based on thesematerials.

Mod\'elisation des performances des structures lasers \`a base des chalcog\'enures de m\'etaux de transition: MoS$_2$/WSe$_2$