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Recently orbital Hall current has attracted attention as an alternativemethod to switch the magnetization of ferromagnets. Here we present ourfindings on electrical switching of antiferromagnetic state in Mn3Sn/Cr, wheredespite the much smaller spin Hall angle of Cr, the switching current densityis comparable to heavy metal based heterostructures. On the other hand, theinverse process, i.e., spin-to-charge conversion in Cr-based heterostructuresis much less efficient than the Pt-based equivalents, as manifested in thealmost one order of magnitude smaller terahertz emission intensity and spincurrent induced magnetoresistance in Cr-based structures. These results incombination with the slow decay of terahertz emission against Cr thickness(diffusion length of ~11 nm) suggest that the observed magnetic switching canbe attributed to orbital current generation in Cr, followed by efficientconversion to spin current. Our work demonstrates the potential of light metalslike Cr as an efficient orbital/spin current source for antiferromagneticspintronics.

Efficient non-collinear antiferromagnetic state switching induced by orbital Hall effect in chromium